Planarizing method
US7862737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2007 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Oct 8, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.