Growth of and defect reduction in nanoscale materials
US7862793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Feb 19, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2202/36
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Methods by which the growth of a nanostructure may be precisely controlled by an electrical current are described here. In one embodiment, an interior nanostructure is grown to a predetermined geometry inside another nanostructure, which serves as a reaction chamber. The growth is effected by a catalytic agent loaded with feedstock for the interior nanostructure. Another embodiment allows a preexisting marginal quality nanostructure to be zone refined into a higher-quality nanostructure by driving a catalytic agent down a controlled length of the nanostructure with an electric current. In both embodiments, the speed of nanostructure formation is adjustable, and the growth may be stopped and restarted at will. The catalytic agent may be doped or undoped to produce semiconductor effects, and the bead may be removed via acid etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.