Method of correcting for pattern run out
US7862859B2 · kind B2 · utility
0Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Jun 1, 2007 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Nov 3, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps of
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.