Method of forming an integrated MEMS resonator
US7863069B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 27, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Aug 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/02503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of producing an integrated MEMS resonator includes providing a substrate including single crystal silicon and partially forming a resonator in a first portion of the substrate, the resonator having a resonating element formed by the substrate and an electrode, the resonating element and the electrode forming a variable capacitor. The method also includes forming circuitry in a second portion of the substrate, the circuitry configured for detecting capacitance of the variable capacitor and finish forming the resonator and integrating the resonator with the circuitry so that the electrode is in communication with the circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.