Method of preparing detectors for oxide bonding to readout integrated chips
US7863097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2008 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jul 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method of preparing detectors for oxide bonding to an integrated chip, e.g., a readout integrated chip, includes providing a wafer having a plurality of detector elements with bumps thereon. A floating oxide layer is formed surrounding each of the bumps at a top portion thereof. An oxide-to-oxide bond is formed between the floating oxide layer and an oxide layer of the integrated chip which is provided in between corresponding bumps of the integrated chip. The oxide-to-oxide bond enables the bumps on the detector elements and the bumps on the integrated chip to be intimately contacted with each other, and removes essentially all mechanical stresses on and between the bumps. In another embodiment, a device has an interconnect interface that includes the oxide-to-oxide bond and an electrical connection between the bumps on the detector elements and the bumps on the integrated chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.