High efficiency lighting device and method for fabricating the same
US7863608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2009 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jul 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a high-efficiency lighting device and a method for fabricating the same. The method of the present invention comprises steps: providing an insulation substrate and sequentially forming an electrode layer and a seed layer on the insulation layer; forming a plurality of zinc oxide micro and nano structures and a plurality of first insulation units on the seed layer, wherein each zinc oxide micro and nano structure is arranged between two neighboring first insulation units; forming a nitride layer on the side wall of each zinc oxide micro and nano structure; and forming an electrode layer on each nitride layer. The present invention achieves a high-efficiency lighting device via growing nitride layers on the side walls of zinc oxide micro and nano structures. Further, the present invention can reduce the fabrication cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.