Semiconductor light emitting device

US7863623B2 · kind B2 · utility

Assignee

• PANASONIC HOLDINGS CORPORATION · JP

Inventors

• Yoshitaka Kinoshita · Kokubunji, JP
• Hidenori Kamei · Fukuoka, JP

Key dates

• Filing date: Sep 12, 2006
• Grant date: Jan 4, 2011
• Expiry date: Apr 26, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-xInxN (0<x<1).