Field effect transistor
US7863648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jun 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A field effect transistor (100) exhibiting good performance at high voltage operation and high frequency includes a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region where the second field plate electrode (118) overlap the upper part of a structure including the first field plate electrode and a gate electrode (113) is designated as Lol, and the gate length is Lg, the relation expressed as 0 ≦Lol/Lg≦1 holds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.