Non-volatile memory device and method of fabricating the same
US7863672B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2008 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Oct 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.