Non-volatile memory device and method of operating the same
US7863673B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jul 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.