Semiconductor devices and methods of fabricating the same
US7863676B2 · kind B2 · utility
0Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Feb 23, 2007 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Sep 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
Abstract
A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a recess region including a bottom surface that is lower than the main surface, and a gate electrode formed over the recess region, wherein a top surface of the device isolation layer adjacent to the recess region is lower than the bottom surface of the recess region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.