Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same
US7867461B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2006 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 30, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/17
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.