Processing method for group IBIIIAVIA semiconductor layer growth
US7867551B2 · kind B2 · utility
3Cited by
6References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 21, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jun 18, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially reacted. After the dopant structure is formed on the partially reacted precursor layer, the dopant structure and partially reacted precursor layer is fully reacted. The dopant structure includes a dopant material such as Na.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.