Transparent conductive film and method for manufacturing the same
US7867636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2006 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 4, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31507
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.