Forming inductor and transformer structures with magnetic materials using damascene processing for integrated circuits
US7867787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | May 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.