Method of providing electrical separation in integrated devices and related devices
US7867792B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2009 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/042
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated device includes two sections (A, B), such as a DFB laser (A) and an EAM modulator (B), having a semi-insulating (SI) separation region therebetween. The separation region (24) is of a material acting as a trap on electrons and configured to impede current flow between the two sections (A, B) due to holes. The separation region (24) may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region (24) is of a material that acts as a trap on electrons and is provided over a p-type substrate (20) common to the two sections (A, B).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.