Patent · US Active

Structure replication through ultra thin layer transfer

US7867805B2 · kind B2 · utility

2Cited by

4References

16Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Rainer Krause · Hochheim, DE
Markus Schmidt · Seibersbach, DE

Key dates

Filing date	May 13, 2008
Grant date	Jan 11, 2011
Priority date	—
Expiry date	Jul 2, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/2007
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods and apparatus for forming a product from ultra thin layers of a base material are disclosed. Some embodiments provide a process that allows one to structure a silicon base material, like the ingot, and to transfer this structure into a respective silicon process step. Some embodiments provide a process that allows one to structure any complex structured layer stacks, where the layers can be applied on top of each other using, e.g., bonding technology.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.