Organic thin film transistors

US7867813B2 · kind B2 · utility

Assignees

• Cambridge Display Technology Limited · GB
• PANASONIC HOLDINGS CORPORATION · JP

Inventors

• Jonathan Halls · Cambridge, GB
• Craig Murphy · Kirkland, US
• Gregory Whiting · Menlo Park, US
• Sadayoshi Hotta · Osaka, JP

Key dates

• Filing date: Jun 20, 2008
• Grant date: Jan 11, 2011
• Expiry date: Jan 15, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/466

Abstract

A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.