Laminated thin-film device, manufacturing method thereof, and circuit
US7867869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2003 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Oct 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.