Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors
US7867880B2 · kind B2 · utility
5Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jun 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.