Method of manufacturing nitride semiconductor substrate
US7867881B2 · kind B2 · utility
2Cited by
1References
3Claims
0Family size
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Key dates
| Filing date | Mar 4, 2009 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | May 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02609
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a nitride semiconductor substrate including the steps of: forming a nitride semiconductor layer on a sapphire substrate, and manufacturing a freestanding nitride semiconductor substrate by using the nitride semiconductor layer separated from the sapphire substrate, wherein variability of inclinations of the C-axes, being a difference between a maximum value and a minimum value of inclination of the C-axes in a radially-outward direction at each point on a front surface of the sapphire substrate is 0.3° or more and 1° or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.