Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
US7867885B2 · kind B2 · utility
3Cited by
45References
23Claims
0Family size
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Key dates
| Filing date | Feb 22, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.