Method forming ohmic contact layer and metal wiring in semiconductor device
US7867898B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Feb 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an ohmic contact layer including forming an insulation layer pattern on a substrate, the insulation pattern layer having an opening selectively exposing a silicon bearing layer, forming a metal layer on the exposed silicon bearing layer using an electrode-less plating process, and forming a metal silicide layer from the silicon bearing layer and the metal layer using a silicidation process. Also, a method of forming metal wiring in a semiconductor device using the foregoing method of forming an ohmic contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.