Methods of forming a contact structure
US7867902B2 · kind B2 · utility
3Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2009 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a contact structure, a first insulation layer including a first contact hole is formed on a substrate. A metal layer including tungsten is formed to fill the first contact hole. A planarization process is performed on the metal layer until the first insulation layer is exposed to form a first contact. A second contact is grown from the first contact. The second contact is formed without performing a photolithography process and an etching process to prevent misalignments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.