Passivated thin film and method of producing same
US7867903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2010 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Mar 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of producing a passivated thin film material is disclosed wherein an insulating thin film layer (10), having pinholes (12) therein, is positioned upon an underlying electrically conductive substrate (11). The thin film layer is then electroplated so that the pinholes are filled with a reactive metal. The thin film layer and substrate are then immersed within a silicon doped tetramethylammonium hydroxide (TMAH) solution. Excess silica within the solution precipitates onto the top surfaces of the aluminum plugs (13) to form an electrically insulative cap which electrically insulates the top of the aluminum plug. As an alternative, the previously described metal plugs may be anodized so that at least a portion thereof becomes an oxidized metal which is electrically insulative.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.