Method for manufacturing semiconductor device
US7867907B2 · kind B2 · utility
21Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jun 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the first layer, the peeling layer is selectively irradiated with a laser beam from the peeling layer side to reduce adhesiveness of a part of the peeling layer. Next, the peeling layer in the part with reduced adhesiveness is removed, and the left portion of the peeling layer is used as a mask to selectively etch the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.