Methods of reducing impurity concentration in isolating films in semiconductor devices
US7867924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Apr 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.