Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter

US7868243B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Marc Plissonnier · Eybens, FR
• Frederic Gaillard · Grenoble, FR
• Raphael Salot · Le Pont-de-Claix, FR
• Jean-Antoine Gruss · Seyssinet-Pariset, FR

Key dates

• Filing date: Jul 13, 2007
• Grant date: Jan 11, 2011
• Expiry date: Aug 26, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/2971

Abstract

Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.