Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material
US7868322B2 · kind B2 · utility
1Cited by
10References
18Claims
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Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Feb 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
Abstract
Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.