Field effect transistor
US7868326B2 · kind B2 · utility
115Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Nov 9, 2005 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.