Silicon break over diode

US7868352B2 · kind B2 · utility

Assignee

• OptiSwitch Technology Corporation · US

Inventors

• David Giorgi · Solana Beach, US
• Tajchai Navapanich · San Diego, US

Key dates

• Filing date: Sep 23, 2008
• Grant date: Jan 11, 2011
• Expiry date: Feb 28, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/80

Abstract

A Break Over Diode (“BOD”) device is a gate-less two terminal high power semiconductor switch in which transitions from a blocking state to a conducting state are triggered by a dV/dt pulse to the anode. The BOD device can be thought of as two cross-coupled PNP and NPN transistors, and includes both anode and cathode shorts which reduce the gain of the NPN and PNP transistors by shunting some current away from their bases directly to their emitters, thereby improving blocking. Moreover, the anode and cathode shorts in conjunction with the device blocking junction form PN diodes which are distributed throughout the bulk of the material and function as anti-parallel diodes to the base-emitter junctions of the PNP and NPN transistors, which enables the BOD device to handle a larger current reversal for a longer period of time. The P base layer may be made thin to decrease the voltage fall time from full blocking to full conduction, and the cathode and anode shorts may be provided in a honeycomb pattern.