Patent · US Active

Compound semiconductor substrate for a field effect transistor

US7868356B2 · kind B2 · utility

0Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2009
Grant dateJan 11, 2011
Priority date—
Expiry dateApr 30, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/4738

Abstract

A III-V field effect transistor comprising

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.