Low leakage protection device
US7868387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jan 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
A high-voltage, low-leakage, bidirectional electrostatic discharge (ESD, or other electrical overstress) protection device includes a doped well disposed between the terminal regions and the substrate. The device includes an embedded diode for conducting current in one direction, and a transistor feedback circuit for conducting current in the other direction. Variations in the dimensions and doping of the doped well, as well as external passive reference via resistor connections, allow the circuit designer to flexibly adjust the operating characteristics of the device, such as trigger voltage and turn-on speed, to suit the required mixed-signal operating conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.