PIN diode with improved power limiting
US7868428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/422
Abstract
A PIN diode comprising an N-type substrate comprising a cathode of the PIN diode and having an intrinsic layer disposed upon the N-type substrate and having a top surface a P-type material disposed upon the top surface of the intrinsic layer comprising an anode of the PIN diode and a N-type material disposed over the sidewall of the cathode and over the sidewall and a portion of the top surface of the intrinsic material that is not occupied by the anode, wherein a horizontal gap is defined between the anode and the cathode through the intrinsic material, the gap being variable in width and/or the horizontal gap is less than the thickness of the intrinsic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.