Semiconductor device having single-ended sensing amplifier
US7869294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2009 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 18, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/223
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A single-ended sense amplifier in a semiconductor storage device having a hierarchical bit line structure includes a first MOS transistor for amplifying a signal outputted from a memory cell to a bit line, a second MOS transistor for feeding the output of the first MOS transistor to a global bit line, and a global bit line voltage determination circuit; and at least the ON/OFF timing of the second MOS transistor or the read timing of a global sense amplifier that includes the global bit line voltage determination circuit is controlled by the output signal of a delay circuit that includes a replica of the first MOS transistor and a replica of the global bit line voltage determination circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.