Devices and methods for providing stimulated raman lasing
US7869470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Aug 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing. In some embodiments, methods include forming a layer of silicon, and etching the layer of silicon to form a lattice of holes with a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.