Directly modulated laser with isolated modulated gain electrode for improved frequency modulation
US7869473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jul 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06251
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A DBR laser, such as a semiconductor DBR laser is disclosed having improved frequency modulation performance. The laser includes a split gain electrode and a tuning electrode. A modulating current encoding a data signal is injected into a first section of the gain electrode whereas a substantially DC bias voltage is imposed on a second section of the gain electrode positioned between the first gain electrode and the tuning electrode. The first and second gain electrodes are electrically isolated from each other and the tuning electrode by a large isolation resistance. In some embodiments, the isolation resistance is generated by forming the electrodes on a P+ layer and removing portions of the P+ layer between adjacent electrodes. Capacitors may couple to one or both of the second gain electrode and the tuning electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.