Convective flow chemical vapor deposition growth of nanostructures
US7871668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2006 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Mar 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/857
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention is directed to CVD methods and systems that can be utilized to form nanostructures. Exceptionally high product yields can be attained. In addition, the products can be formed with predetermined particle sizes and morphologies and within a very narrow particle size distribution. The systems of the invention include a CVD reactor designed to support the establishment of a convective flow field within the reactor at the expected carrier gas flow rates. In particular, the convective flow field within the reactor can include one or more flow vortices. The disclosed invention can be particularly beneficial for forming improved thermoelectric materials with high values for the figure of merit (ZT).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.