Method for manufacturing semiconductor optical device using inductive coupled plasma-enhance CVD
US7871840B2 · kind B2 · utility
1Cited by
12References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 2006 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Jun 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor laser diode prevents not only the adhesion of the upper electrode but the heat dissipation of the mesa from degrading. The laser diode includes a substrate, portion of which forms a mesa including an active layer, an insulating layer formed so as to bury the mesa, and an electrode formed on the mesa and the insulating layer. This insulating layer may be selected from SiO2, SiON, SiN, Al2O3 or ZrO2 and formed by the inductive coupling plasma-enhanced chemical vapor deposition (ICP-CVD) technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.