Patent · US Active

Use of axial substituted phthalocyanine compound for preparing organic thin-film transistor

US7871855B2 · kind B2 · utility

3Cited by
1References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 17, 2008
Grant dateJan 18, 2011
Priority date
Expiry dateMar 5, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P20/10
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

This invention relates to the use of axial substituted phthalocyanine compound as a semiconductor layer between the source/drain electrodes of organic thin-film transistor. The centre ligand of the axial substituted phthalocyanine compound is an atom with 3 valences or higher, and the axial ligands are chlorine, fluorine, or oxygen which can be connected with the centre ligands of axial substituted phthalocyanine compounds. Crystalline Film with high quality can be prepared on an organic substrate from the axial substituted phthalocyanine compound using vapor deposition process. These crystalline films have high carrier mobility, rich energy level, and stable performances and are easy for integrated process. The field effect mobility and the on/off Ratio of the organic thin-film transistor are 0.01 cm2/Vs or more and higher than 105, respectively.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.