Methods of using single spacer to triple line/space frequency
US7871909B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2010 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Jan 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming patterns having triple the line frequency of a first pattern using only a single spacer are disclosed. For example, the first pattern is formed in a first and a second material using a lithographic process. Sidewall spacers are formed from a third material adjacent to exposed sidewalls of features in the second material. The width of the features in the first pattern in the first material is reduced. For example, the width is reduced to about the target width of features in a final pattern. The width of features in the first pattern in the second material is reduced using remaining portions of the first material as a mask. A second pattern is formed based on remaining portions of the second material and the sidewall spacers. The features in the second pattern may be lines having about ⅓ the width of lines in the first pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.