Method of making transistor gates with controlled work function

US7871943B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Tim Boescke · Dresden, DE
• Tobias Mono · Dresden, DE

Key dates

• Filing date: Feb 12, 2008
• Grant date: Jan 18, 2011
• Expiry date: Jul 26, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the invention provide methods for making an integrated circuit comprising providing a substrate, forming a structured layer stack on the substrate comprising a dielectric layer located on the substrate and an oxide-free metallic layer located on the dielectric layer, wherein the metallic layer comprising a transition metal. The method further comprises oxidizing the metallic layer, thereby increasing a work function of the metallic layer. Moreover, a substrate for making an integrated circuit is described.