Photovoltaic device
US7872194B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Jan 7, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
The present invention provides a photovoltaic device having excellent environmental durability and good adhesion with a collector electrode made of metal paste. The photovoltaic device comprises an ITO film on a p-type amorphous silicon hydride film on a light incident side of the photovoltaic device and a collector electrode made of silver paste on the ITO film. A silicon oxide insulation film made of SiOx is provided on at least regions on the ITO film where the collector electrode is not formed. The thickness of the silicon oxide insulation film is about 1 to 10 times thicker than an arithmetic mean deviation (Ra) of the underlying ITO film. The silicon oxide insulation film is a film having a Si-2p peak with a full width at half maximum of 2.45 or less, which is evaluated by an X-ray photoelectron spectroscopy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.