Patent · US Active

Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

US7872252B2 · kind B2 · utility

6Cited by

11References

16Claims

0Family size

Assignee

Cyrium Technologies Incorporated · CA

Inventors

Norbert Puetz · Niederaußem, DE
Simon Fafard · Mississauga, CA
Bruno J. Riel · Ottawa, CA

Key dates

Filing date	Jul 11, 2007
Grant date	Jan 18, 2011
Priority date	—
Expiry date	May 4, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.