Wiring and organic transistor, and manufacturing method thereof
US7872254B2 · kind B2 · utility
2Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2007 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Jan 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An organic transistor is formed with a low material cost and low manufacturing cost while still providing high performance and a low contact resistance with an organic semiconductor of the transistor. The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, a property of the second metal is used in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.