Organic thin film transistor array and method of manufacturing the same
US7872257B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2008 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Jul 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/233
Abstract
An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.