Substrate structure for a thin film transistor
US7872263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2006 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Sep 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.