Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method

US7872333B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Franz Laermer · Stuttgart, DE
• Lutz Mueller · Altadena, US
• Winfried Bernhard · Gerlingen, DE

Key dates

• Filing date: May 6, 2003
• Grant date: Jan 18, 2011
• Expiry date: Aug 27, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/958
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A layer system is described including a silicon layer and a passivation layer which is applied at least regionally to the silicon layer's surface, the passivation layer having a first, at least largely inorganic partial layer and a second partial layer, the second partial layer being made of an organic compound including silicon or containing such a material. In particular, the second partial layer is structured in the form of a “self-assembled monolayer.” Furthermore, a method is described for creating a passivation layer on a silicon layer, a first, inorganic partial layer being created on the silicon layer and a second partial layer, containing an organic compound including silicon or being made thereof, being created at least in certain areas on the first partial layer. Both partial layers form the passivation layer. The described layer system or the described method is particularly suited for creating self-supporting structures in silicon.