Patent · US Active

Carbon nanotube diodes and electrostatic discharge circuits and methods

US7872334B2 · kind B2 · utility

3Cited by

5References

20Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Jia Chen · Ossining, US
Steven H. Voldman · South Burlington, US

Key dates

Filing date	May 4, 2007
Grant date	Jan 18, 2011
Priority date	—
Expiry date	Sep 13, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/75
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Diodes and method of fabricating diodes. A diode includes: an p-type single wall carbon nanotube; an n-type single wall carbon nanotube, the p-type single wall carbon nanotube in physical and electrical contact with the n-type single wall carbon nanotube; and a first metal pad in physical and electrical contact with the p-type single wall carbon nanotube and a second metal pad in physical and electrical contact with the n-type single wall carbon nanotube.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.