Method for manufacturing piezoelectric film element, and piezoelectric film element
US7872403B2 · kind B2 · utility
1Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Oct 21, 2008 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Apr 8, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
Abstract
A method for manufacturing a piezoelectric film element includes foursteps. The first is to form a bottom electrode on a Si substrate. The second is to form a seed layer with a layered perovskite structure on the bottom electrode. The third is to form a Bi4Ti3O12—BaBi4Ti4O15 based piezoelectric film on the seed layer. The final step is to form an top electrode on the piezoelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.